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Monos flash

「Monos flash」文章包含有:「FlashMemoryDatasheet」、「AMONOS」、「40nmembeddedSG」、「FinFETSplit」、「A28nmEmbeddedSplit」、「SONOS」、「A28nmEmbeddedSplit」、「RenesasElectronicsAchievesLarge」、「Figure1from40」

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Flash Memory Datasheet
Flash Memory Datasheet

https://www.renesas.com

Data flash memory. ○ 64 Kbytes, reprogrammable up to 250,000 times. ○ Programming/erasing as background operations (BGOs). SG-MONOS Flash Specification. Code ...

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A MONOS
A MONOS

https://iopscience.iop.org

Metal-oxide-nitride-oxide-silicon MONOS type memory devices with TaN/HfN gate and a high dielectric constant high-k).

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40nm embedded SG
40nm embedded SG

https://ieeexplore.ieee.org

40nm embedded SG-MONOS flash macros for automotive with 160MHz random access for code and endurance over 10M cycles for data. Abstract: This paper presents 40nm ...

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FinFET Split
FinFET Split

https://confit.atlas.jp

Metal oxide nitride oxide silicon (MONOS) is a charge-trapping type Flash and MONOS with split gate structure (SG-MONOS) has a long track record as highly.

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A 28 nm Embedded Split
A 28 nm Embedded Split

https://ieeexplore.ieee.org

Abstract—First-ever 28 nm embedded split-gate MONOS. (SG-MONOS) flash macros have been developed to increase memory capacity embedded in micro controller ...

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SONOS
SONOS

https://zh.wikipedia.org

SONOS,是矽-氧化物-氮化物-氧化物-矽(英語:Silicon-Oxide-Nitride-Oxide-Silicon)的英語首字母縮寫,是一種和快閃記憶體聯繫較為緊密的非揮發性存儲器。

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A 28 nm Embedded Split
A 28 nm Embedded Split

https://www.researchgate.net

First-ever 28 nm embedded split-gate MONOS (SG-MONOS) flash macros have been developed to increase memory capacity embedded in micro controller units and to ...

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Renesas Electronics Achieves Large
Renesas Electronics Achieves Large

https://www.renesas.com

The SG-MONOS flash memory performs its data storage in a thin trap film formed on the surface of the silicon substrate, which makes it ...

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Figure 1 from 40
Figure 1 from 40

https://www.semanticscholar.or

40-nm Embedded Split-Gate MONOS (SG-MONOS) Flash Macros for Automotive With 160-MHz Random Access for Code and Endurance Over 10 M Cycles for Data at the ...